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Il fosforo nero potrebbe diventare per l'elettronica il silicio del futuro e diventare il cuore dei transistor a bassissimo consumo energetico di domani. La particolare forma del non metallo fa parte della nuova generazione di materiali sottilissimi arrivata dopo la scoperta nel 2004 del grafene (costituito da un solo strato di atomi di carbonio), il cosiddetto “materiale delle meraviglie” che valse a Konstantin Novoselov e Andre Geim il Premio Nobel nel 2010.
Su Nature Communications, uno studio condotto in Canada dalle università McGill e di Montréal mostra che quando gli elettroni si muovono in un foglio di fosforo nero, lo fanno solo in due dimensioni e con straordinarie proprietà di conduzione elettrica. Meglio quindi di quanto non avvenga nel caso del grafene. Ciò che lascia prevedere la possibilità di progettare transistor (e quindi microchip) ad alta efficienza energetica. Transistor che sono le componenti principali della microelettronica.
“Siamo ancora lontani dal riuscire a fabbricare un transistor dello spessore di un atomo ma ora abbiamo fatto un passo in avanti in questa direzione” sottolinea uno degli autori della ricerca, Thomas Szkopek, dell'università della McGill.
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